10 May 2005 Characterization analysis study of μ-bridge defect using simulation and wafer inspection tools
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Abstract
As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and simulation techniques were employed. The inspection technologies used include brightfield, darkfield, and electron-beam inspection (EBI) tools, while the simulation analysis uses charge calculations and Monte Carlo scattering simulation. Special μ-bridge defects were only captured by the EBI tool and verified by focused ion beam (FIB) milling. This result corresponds to simulation data.
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Tae-yong Lee, Byoung-ho Lee, Soo-bok Chin, Do-hyun Cho, Chang-lyong Song, Jorge P. Fernandez, Domingo Choi, Luca Grella, "Characterization analysis study of μ-bridge defect using simulation and wafer inspection tools", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.596473; https://doi.org/10.1117/12.596473
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