Characterization analysis study of µ-bridge defect using simulation and wafer inspection tools

Tae-yong Lee; Byoung-ho Lee; Soo-bok Chin; Do-hyun Cho; Chang-lyong Song; Jorge P. Fernandez; Domingo Choi; Luca Grella

doi:10.1117/12.596473

10 May 2005 Characterization analysis study of μ-bridge defect using simulation and wafer inspection tools

Tae-yong Lee, Byoung-ho Lee, Soo-bok Chin, Do-hyun Cho, Chang-lyong Song, Jorge P. Fernandez, Domingo Choi, Luca Grella

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.596473
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and simulation techniques were employed. The inspection technologies used include brightfield, darkfield, and electron-beam inspection (EBI) tools, while the simulation analysis uses charge calculations and Monte Carlo scattering simulation. Special μ-bridge defects were only captured by the EBI tool and verified by focused ion beam (FIB) milling. This result corresponds to simulation data.

Citation Download Citation

Tae-yong Lee, Byoung-ho Lee, Soo-bok Chin, Do-hyun Cho, Chang-lyong Song, Jorge P. Fernandez, Domingo Choi, and Luca Grella "Characterization analysis study of μ-bridge defect using simulation and wafer inspection tools", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.596473

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