Paper
10 May 2005 Cost effective CD control for DUV implant layers using the Archer MPX focus-exposure monitor
Author Affiliations +
Abstract
CD control is one of the main parameters for IC product performances and a major contributor to yield performance. Traditional SEM metrology can be a challenge on particular layers due to normal process variation and has not proven to provide sufficient focus monitoring ability. This in turn causes false positives resulting in unnecessary rework, but more importantly missed focus excursions resulting in yield loss. Alexander Starikov, Intel Corporation, alludes to the fact that focus and exposure "knobs" account for greater than 80% of CD correctible variance1. Spansion F25 is evaluating an alternative technology using an optical method for the indirect monitoring of the CD on the implant layer. The optical method utilizes a dual tone line-end-shortening (LES) target which is measured on a standard optical overlay tool. The dual tone technology enables the ability to separate the contributions of the focus and exposure resulting in a more accurate characterization of the two parameters on standard production wafers. Ultimately by keeping focus and exposure within acceptable limits it can be assumed that the CD will be within acceptable limits as well without the unnecessary rework caused by process variation. By using designed experiments this paper will provide characterization of the LES technique on the implant layer showing its ability to separate focus-exposure errors vs. the traditional SEM metrology. Actual high volume production data will be used to compare the robustness and sensitivity of the two technologies in a real life production environment. An overall outline of the production implementation will be documented as well.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sean Hannon, Brad Eichelberger, Chris Nelson, Berta Dinu, Harold Kennemer, and Kevin Monahan "Cost effective CD control for DUV implant layers using the Archer MPX focus-exposure monitor", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600130
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CITATIONS
Cited by 2 patents.
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Scanning electron microscopy

Metrology

Finite element methods

Scanners

Overlay metrology

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