10 May 2005 Effective control of photomask surface chemical residuals through thermal treatment
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Abstract
We investigated the control of residual ions on the mask surface and the phase/transmission change rate by using thermal treatment after a conventional cleaning process. We hypothesized that the remaining sulfuric ions on the mask surface could combine with other ions and produce compounds during the thermal treatment. These compounds are easily removed by a hot D.I water rinse. Our study shows that the amount of remaining sulfuric ions is 250ng/mask when the mask has been thermally treated. The amount of sulfuric ions is substantially reduced compared to the results of other cleaning processes. Additionally we have found that the thermal treatment can be reduced varying the phase/trans value according to the cleaning cycle and the variation was stable even with a higher concentration of SC-1 solution.
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Han-Byul Kang, Han-Byul Kang, Jong-Min Kim, Jong-Min Kim, Yong-Dae Kim, Yong-Dae Kim, Hyun-Joon Cho, Hyun-Joon Cho, Sang-Soo Choi, Sang-Soo Choi, } "Effective control of photomask surface chemical residuals through thermal treatment", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599871; https://doi.org/10.1117/12.599871
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