10 May 2005 Experimental study of contact edge roughness on sub-100 nm various circular shapes
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Abstract
The measurement of edge roughness has become a hot issue in the semiconductor industry. Especially the contact roughness is being more critical as design rule shrinks. Major vendors offer a variety of features to measure the edge roughness in their CD-SEMs. For the line and space patterns, features such as Line Edge Roughness (LER) and Line Width Roughness (LWR) are available in current CD-SEMs. However the features currently available in commercial CD-SEM cannot provide a proper solution in monitoring the contact roughness. We had introduced a new parameter R, measurement algorithm and definition of contact edge roughness to quantify CER and CSR in previous paper. The parameter, R could provide an alternative solution to monitor contact or island pattern roughness. In this paper, we investigated to assess optimum number of CD measurement (1-D) and fitting method for CER or CSR. The study was based on a circular contact shape. Some new ideas to quantify CER or CSR were also suggested with preliminary experimental results.
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Tae Yong Lee, Dongchul Ihm, Hyo Cheon Kang, Jum Bun Lee, Byoung Ho Lee, Soo Bok Chin, Do Hyun Cho, Chang Lyong Song, "Experimental study of contact edge roughness on sub-100 nm various circular shapes", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.597948; https://doi.org/10.1117/12.597948
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