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10 May 2005 Exploring advanced mask repair options
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The extension of 193 nm lithography to the 65 and 45nm nodes transfers the development challenges from those associated with a new wavelength to those required to push an existing technology further. With respect to mask repair, new challenges are introduced as the mask features shrink and OPC becomes increasingly aggressive. These same factors increase mask costs to provide strong motivation for enhancing existing repair capabilities. The business case for investing in repair has only become stronger for leading edge 193 nm masks. This paper evaluates several repair techniques on a range of clear and opaque defects in Cr, MoSi and quartz features. A systematic approach is used to evaluate options for understanding the quality of a repair. Though conventional reconstruction techniques are used, we also explore non-intuitive repairs. These non-standard repairs attempt to reconstruct the printed image without duplicating the designed physical structure. An understanding of each method's process latitude is gained. AIMS analysis, lithographic simulations, and wafer print results are used to refine the understanding of repair specifications.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emily Fisch, Colin Brodsky, Philip Flanigan, Mark Lawliss, Jed Rankin, and David Thibault "Exploring advanced mask repair options", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005);

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