10 May 2005 Impact of EUV mask pattern profile shape on CD measured by CD-SEM
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For extreme ultraviolet lithography (EUVL) the absorber binary mask is until now the most promising mask type. Since at EUV only reflective masks are possible, EUVL will introduce new materials for mask manufacturing. In addition it is likely that the pattern of an EUV mask will consist of a structured double layer system. Therefore, mask CD-SEM metrology for EUVL has to deal with the contrast of rather new materials and has to face a more complex mask pattern topography situation. Using a Monte Carlo model, we simulate the SEM-signals emerging from a given EUV mask pattern topography while scanned by the electron beam of a SEM. The simulation is tuned to closely match the experimental situation of a commercial CD-SEM. Generated SEM images are analyzed by means of a commercial CD-algorithm and a peak detection CD-algorithm. Knowing the exact pattern shape that are fed into the simulation, we determine the effect of specific pattern profile changes on SEM-signal and algorithm specific CD.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uwe Dersch, Uwe Dersch, Arnd Korn, Arnd Korn, Cornelia Engelmann, Cornelia Engelmann, Carl Georg Frase, Carl Georg Frase, Wolfgang Haessler-Grohne, Wolfgang Haessler-Grohne, Harald Bosse, Harald Bosse, Florian Letzkus, Florian Letzkus, Joerg Butschke, Joerg Butschke, } "Impact of EUV mask pattern profile shape on CD measured by CD-SEM", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.598644; https://doi.org/10.1117/12.598644

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