10 May 2005 Novel CD-SEM calibration reference patterned by EB cell projection lithography
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Abstract
A silicon grating pattern with a 100-nm pitch size for calibration of electron-beam (EB) metrology systems was formed by EB cell projection writing using a grating stencil mask and dry etching. According to the evaluation results from a critical-dimension scanning electron microscope (CD-SEM), the uniformity of the pitch size in a 1.8 x 1.8-mm chip was smaller than 3 nm within 3 sigma in the x and y directions. The obtained 100-nm pitch size was calibrated by DUV laser diffraction. The difference between designed 100-nm pitch size and the calibrated pitch size by DUV laser diffraction was smaller than 0.1 nm. It is thus concluded that more precise calibration of the CD-SEM using this 100-nm pitch grating is expected compared with conventional calibration using 240-nm pitch reference grating fabricated by laser-interferometer lithography and anisotropic chemical etching.
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Yoshinori Nakayama, Yoshinori Nakayama, Satoshi Gonda, Satoshi Gonda, Ichiko Misumi, Ichiko Misumi, Tomizo Kurosawa, Tomizo Kurosawa, Jun-ichiro Kitta, Jun-ichiro Kitta, Hisaichi Mine, Hisaichi Mine, Katsuhiro Sasada, Katsuhiro Sasada, Shozo Yoneda, Shozo Yoneda, Takeshi Mizuno, Takeshi Mizuno, } "Novel CD-SEM calibration reference patterned by EB cell projection lithography", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.597165; https://doi.org/10.1117/12.597165
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