10 May 2005 Qualification of an integrated scatterometer for CD measurements of sub-100nm resist structures in a high-volume 300mm DRAM production environment
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Abstract
In our work, Tokyo Electron's iODP103 (integrated Optical Digital Profilometry) technology is used for integrated measurements on a next-generation Lithius Clean Track on after develop inspect (ADI) 300mm wafers. We show that single tool precision and tool-to-tool matching of three integrated systems fulfill the precision requirements of the 70nm DRAM technology node. Further results from a long-term pilot test using integrated scatterometry in a full-volume DRAM production of the 110nm technology node on 300mm wafers are also discussed. The data from our experiment is collected and charted in fab monitored statistical process control (SPC) charts, and compared to the charts from the POR CD-SEM measurements. The sampling plans are optimized in such a way as to perform fully integrated measurements on all wafers per lot, without throughput loss of the litho cluster. We demonstrate that the possibility of measuring all wafers per lot directly after development, in combination with the sensitivity of the method, allows the identification of effects that could not previously be identified by CD-SEM measurements alone.
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Thomas Marschner, Goeran Fleischer, Stefan Fuchs, Michael Friedrich, Uwe Kramer, Matthias Voigt, Dave Hetzer, "Qualification of an integrated scatterometer for CD measurements of sub-100nm resist structures in a high-volume 300mm DRAM production environment", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.598420; https://doi.org/10.1117/12.598420
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