10 May 2005 The application of critical shape metrology toward CD-SEM measurement accuracy on sub-60nm features
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Abstract
The ever decreasing trend in feature geometry has placed increased importance on the concept of obtaining accurate and repeatable shape information at both the photo and etch steps. Traditional CD-SEM measurement algorithms are known to produce highly repeatable results but with large measurement bias depending on the feature shape (bias = average reported measurement - true value). In this paper we show the value of using Critical Shape Metrology (CSM), a physics-based Monte Carlo model, to extract shape information (sidewall angle, top rounding, footing,...) as well as CD measurements with very low bias, without compromising repeatability and throughput. Shape information and CD bias have been quantified through the use of a CD-AFM for all measurements taken using CSM. Several set of data are also compared to different scatterometry tools.
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J. Foucher, J. Foucher, G. Sundaram, G. Sundaram, D. V. Gorelikov, D. V. Gorelikov, } "The application of critical shape metrology toward CD-SEM measurement accuracy on sub-60nm features", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.601068; https://doi.org/10.1117/12.601068
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