10 May 2005 Utilizing overlay target noise metrics for improved process control
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A method has been developed for calculating the statistical effects of spatial noise on the overlay measurement extracted from a given overlay target. Previously, this metric has been shown to correlate well to the random component of Overlay Mark Fidelity (OMF), and that OMF is a significant contributor to the noise hierarchy. Quantitative diagnostic methods are required in order to assess the capabilities of overlay metrology and provide visibility into root-causes of potential inaccuracies intrinsic in the processing of overlay targets. We explore the use of this target noise metric for improved process control including improved overlay modeling, process fault detection, and process troubleshooting. In this paper we demonstrate the use of this additional metric for multiple layers in a large volume of production data utilizing existing production sampling.
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Sean Hannon, Sean Hannon, John C. Robinson, John C. Robinson, Marcelo Cusacovich, Marcelo Cusacovich, Chris Nelson, Chris Nelson, Harold Kennemer, Harold Kennemer, "Utilizing overlay target noise metrics for improved process control", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.600153; https://doi.org/10.1117/12.600153

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