4 May 2005 0.31k1 ArF lithography for 70-nm DRAM
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Abstract
512Mbit DRAM with 70 nm design rule was tailored using 0.31k1 ArF lithography technologies. Of the critical mask layers, four pattern layouts were demonstrated: brick wall, line/space, contact and line/contact patterns. For the sake of cost reduction, the conventional technologies were used. Results has shown that SLR (Single-Layer Resist) process, half-tone PSM and the conventional illuminations had a potential of manufacturing 70 nm DRAM. However, it was found that brick wall patterns had asymmetrical shape and total CD uniformity was out of target raging 9.2 nm through 16.3 nm depending mask layouts. We prospect that higher contrast resist and more elaborate resist process will address these problems sooner or later. In case the immersion lithography is not ready around the right time, the feasibility of 0.29k1 ArF lithography was studied through simulation and test, which represented that 0.29k1 technologies were likely to be applied for the development of 60 nm DRAM with the aid of RETs (Resolution Enhancement Technologies) including customized illumination and new hard mask process.
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Cheolkyu Bok, Cheolkyu Bok, Ki-Lyoung Lee, Ki-Lyoung Lee, Jun-Taek Park, Jun-Taek Park, Young-Sun Hwang, Young-Sun Hwang, Tae-Seung Eom, Tae-Seung Eom, Seo-Min Kim, Seo-Min Kim, Geunsu Lee, Geunsu Lee, Jae-Chang Jung, Jae-Chang Jung, Chang-Moon Lim, Chang-Moon Lim, Seung-Chan Moon, Seung-Chan Moon, Jin-Woong Kim, Jin-Woong Kim, } "0.31k1 ArF lithography for 70-nm DRAM", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599348; https://doi.org/10.1117/12.599348
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