Paper
4 May 2005 A new 193nm resist
Toshiaki Fukuhara, Taku Hirayama, Yuji Shibasaki, Shinji Ando, Mitsuru Ueda, Masayuki Endo, Masaru Sasago
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Abstract
A new ArF matrix based on poly(vinylsulfonamide) has been developed. Sulfonamides, whose pKa values are comparable to those of phenols, can be used as acidic functional groups in the design of chemically amplified resist (CAR) and aqueous base developable resist. Various poly(N-alkyl vinylsulfonamide)s were prepared (R=H, CH2CF3, Pr, 1-adanmantyl), and showed high transparency at round 193 nm region. Depending on the substituents, the dissolution rates of films in a 2.38 wt% aqueous tetraethylammonium hydroxide solution were varied from 500 to 0.0035 nm/s. The tetrahydropyranyl (THP) protected poly(vinylsulfonamide) was prepared and the deprotection of THP was easily occurred when the photoresist containing a photoacid generator was exposed to UV light, followed by post-exposure baking.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiaki Fukuhara, Taku Hirayama, Yuji Shibasaki, Shinji Ando, Mitsuru Ueda, Masayuki Endo, and Masaru Sasago "A new 193nm resist", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598342
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KEYWORDS
Polymers

Transparency

Chlorine

Infrared spectroscopy

Magnesium

Photoresist materials

Polymerization

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