A new long range proximity effect in chemically amplified photoresist processes: chemical flare

Timothy Brunner; Z. Chen; Kuang-Jung Chen; S. Scheer

doi:10.1117/12.598822

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4 May 2005 A new long range proximity effect in chemically amplified photoresist processes: chemical flare

Timothy Brunner; Z. Chen; Kuang-Jung Chen; S. Scheer

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Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.598822
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Anomalous linewidth variations of tens of nanometers have been observed for certain chemically amplified resist processes, a phenomenon we call chemical flare. These variations are highly undesirable, since they fall outside the scope of normal OPC corrective action. Experimental data is presented which clarifies the magnitude and range of chemical flare for two different 193nm resist processes. We observed that very weak background exposure, less than half the dose required to clear the resist, can have profound effects when chemical flare is strong. A TARC coating was found to completely eliminate chemical flare. In the absence of a first principles understanding of this phenomenon, we demonstrate simple screening tests for assessing resist processes.

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Timothy Brunner, Z. Chen, Kuang-Jung Chen, and S. Scheer "A new long range proximity effect in chemically amplified photoresist processes: chemical flare", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598822

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