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4 May 2005 A new monocyclic fluoropolymer for 157-nm and 193-nm photoresists
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Abstract
We earlier developed new monocyclic fluoropolymers (ASF-2) for F2 resist materials. But, it is necessary for ASF-2 to improve of their characteristics, especially the dry-etching resistance, in order to apply for ArF and F2 lithography at fine design rules. In this study, to improve the dry-etching resistance keeping good characteristics of ASF-2, we examined using two methods. The one is to co-polymerize with ASF-2; the other is to introduce protective groups. We synthesized a new series of fluorinated co-polymers (ASF-2 with various monomers, e.g., methacrylate derivatives and vinyl ester derivatives). We found that the dry-etching resistance was improved by co-polymerization. Especially, the co-polymer with methacrylates containing an adamantyl moiety had a good dry-etching resistance, 1.45 vs. conventional KrF resist. This co-polymer also kept a good transparency at 193 nm. The introduction of various protective groups to the hydroxyl group of ASF-2 was also investigated. As the result of the optimization of protective groups and a protecting ratio, the partially protected ASF-2 with CCOM protecting groups had a good transparency at 157 nm and a good etching resistance (1.42 vs. conventional KrF resist). Using partially CCOM protected ASF-2 with an appropriate protecting ratio, sub-60 nm line and space pattern in 150 nm-thick film was obtained.
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Takashi Sasaki, Yoko Takebe, Osamu Yokokoji, Akihiko Otoguro, and Kiyoshi Fujii "A new monocyclic fluoropolymer for 157-nm and 193-nm photoresists", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599162
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