4 May 2005 Bottom anti-reflective coatings for 193-nm bilayer system
Author Affiliations +
The suitable high performances Organic Bottom Anti-Reflective Coatings (Organic BARCs) for 193nm Bilayer system, NCA900 series, were developed. Using CF4 gas as etchant, the etching rate of NCA900 series were 0.87 times slower than that of conventional 193nm photoresists. With NCA900 series, the reflectivity was less than 1% at over 300nm BARC thickness on polysilicon, silicon oxide and silicon nitride. Using conventional 193nm photoresist, 80nm L/S (1:1) patterns with 0.5-micron DOF were observed on NCA900 series. NCA900 series showed the excellent litho performance and coating property. This paper presents the development of BARCs for 193nm Bilayer system.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Sakaguchi, Takahiro Sakaguchi, Tomoyuki Enomoto, Tomoyuki Enomoto, Yasuyuki Nakajima, Yasuyuki Nakajima, "Bottom anti-reflective coatings for 193-nm bilayer system", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598715; https://doi.org/10.1117/12.598715


High Contrast Photoresist For Use With Wafer Steppers
Proceedings of SPIE (May 20 1984)
Epitaxial Growth On SIMOX Wafers
Proceedings of SPIE (June 25 1986)
Development of 193-nm organic BARC
Proceedings of SPIE (August 23 2001)
Gas-phase silicon micromachining with xenon difluoride
Proceedings of SPIE (September 12 1995)
Thin film and high etch rate type 248 nm bottom...
Proceedings of SPIE (May 13 2004)
New BARC materials for the 65 nm node in 193...
Proceedings of SPIE (May 13 2004)

Back to Top