4 May 2005 Combined pattern collapse and LWR control at the 70 nm node through application of novel surface conditioner solutions
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Abstract
As pattern collapse and line width roughness (LWR) become critical lithography challenges, there is growing interest in applying surface conditioner solutions during the post-develop process to address BOTH these issues. In this paper, we patterned 90nm 1:1.2 lines/spaces (L/S) on 200mm wafers and 70nm dense lines on 300mm wafers to evaluate the combined performance of pattern collapse and LWR using newly formulated surface conditioners. The performance of each conditioner was compared to the standard formulation, which is capable of significant pattern collapse reduction, but affords no LWR improvement. These newly improved formulations enabled a ~20% LWR reduction for 90nm features and a ~10% LWR reduction for 70nm dense lines. In addition, the new formulations significantly enlarged the LWR and CD process windows for 70nm dense lines, as demonstrated by a 50% increase of maximum depth of focus (DOF) over the standard formulation.
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Peng Zhang, Peng Zhang, Manuel Jaramillo, Manuel Jaramillo, Madhukar B. Rao, Madhukar B. Rao, Brenda Ross, Brenda Ross, Bridget Horvath, Bridget Horvath, Patrick Wong, Patrick Wong, Wendy Gehoel, Wendy Gehoel, Stephan Sinkwitz, Stephan Sinkwitz, } "Combined pattern collapse and LWR control at the 70 nm node through application of novel surface conditioner solutions", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600039; https://doi.org/10.1117/12.600039
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