4 May 2005 Deprotonation mechanism of poly(4-hydroxystyrene) and its derivative
Author Affiliations +
Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005); doi: 10.1117/12.596827
Event: Microlithography 2005, 2005, San Jose, California, United States
With the shrinkage of pattern sizes, the elucidation of reaction mechanisms at molecular level has become essential to resist design. Especially, proton dynamics is the most important issue for sensitivity and resolution of chemically amplified resists. Also, nanoscale topography of patterned resist surface such as line edge roughness may be explained by precise proton dynamics. In chemically amplified resists for post-optical lithographies such as EUV and electron beam lithography, it has been reported that protons come not from acid generators but from base polymers. Determining proton sources is a key to understanding reaction mechanisms at molecular level. In this article, we investigated deprotonation mechanism of poly(4-hydroxystyrene) and poly(4-methoxystyrene) on the exposure to ionizing radiation.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atsuro Nakano, Kazumasa Okamoto, Yukio Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Toshiyuki Kai, Hiroaki Nemoto, Tsutomu Shimokawa, "Deprotonation mechanism of poly(4-hydroxystyrene) and its derivative", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.596827; https://doi.org/10.1117/12.596827

Phase modulation



Image processing



Ionizing radiation

Back to Top