4 May 2005 Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion
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Abstract
We have investigated the possibility of amorphous low molecular weight polyphenols as a chemically amplified positive-tone electron-beam (EB) resist. Low molecular weight polyphenol, 4'4-methylenebis{2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)]methyl} phenol (3M6C-MBSA) as a base matrix, was protected by 1-ethoxyethyl (EE) groups to control the dissolution rate in 0.26 N tetramethylammonium hydroxide aq. developer. The film distribution in the depth direction for resist components with a Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and the Fourier amplitude spectra of line-edge roughness (LER) have been investigated to understand the relationship between them for the resists formulated with 3M6C-MBSA and two types of photo acid generator (PAG), triphenylsulfonium perfluoro-1-butanesulfonate (TPS-PFBS) and triphenylsulfonium n-octanesulfonate (TPS-nOS). From these results, it was found that the resist film consisting of TPS-nOS showed more homogeneous in the depth film distribution than that with TPS-PFBS, and the resist with TPS-nOS also indicated the suppressed LER value of 5.1 nm in the wide frequency range. Therefore, the homogeneity of the resist film may affect the pattern LER.
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Taku Hirayama, Taku Hirayama, Daiju Shiono, Daiju Shiono, Shogo Matsumaru, Shogo Matsumaru, Toshiyuki Ogata, Toshiyuki Ogata, Hideo Hada, Hideo Hada, Junichi Onodera, Junichi Onodera, Tadashi Arai, Tadashi Arai, Toshio Sakamizu, Toshio Sakamizu, Atsuko Yamaguchi, Atsuko Yamaguchi, Hiroshi Shiraishi, Hiroshi Shiraishi, Hiroshi Fukuda, Hiroshi Fukuda, Mitsuru Ueda, Mitsuru Ueda, } "Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600416; https://doi.org/10.1117/12.600416
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