4 May 2005 Diffusion contributions to line end shortening in 193-nm photolithography
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Abstract
As the device design rule is continuously shrinking, line end shortening (LES) has grown to be one of the critical problems in 193 nm photolithography. Among several factors causing LES, diffusivity of photo-generated acid seems to have the most profound effect. Also, diffusivity of base quencher produces equivalent effects on LES, but in the reversed way. Besides, post-exposure bake (PEB) condition is another key factor by affecting diffusion length of photo-generated acid. Low LES can be achieved by lowering PEB temperature or shortening its time. In this paper, we will discuss our experimental results to assess the determining factors of LES and suggest controllability of LES in ArF lithographic process.
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Eun-Kyung Son, Jung-Woo Kim, Sang-Hyang Lee, Chan-Sik Park, Jae-Woo Lee, Jaehyun Kim, Geun-Su Lee, Sung-Koo Lee, Keun-Do Ban, Jae-Chang Jung, Cheol Kyu Bok, Seung-Chan Moon, "Diffusion contributions to line end shortening in 193-nm photolithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598615; https://doi.org/10.1117/12.598615
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