4 May 2005 EUV resist patterning performance from the Intel microexposure tool (MET)
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The patterning targets for EUV resists at the 32 nm node are stringent, and will require significant resist development in order to meet these targets. In this paper, we benchmark the patterning performance of current EUV resists against Intel targets. Resolution data for dense L/S structures, isolated lines, and contact hole structures show that current resists are close to meeting Intel requirements for the 32 nm node, though further optimization is needed. A trade-off is seen between LWR and sensitivity (6.0 nm LWR and 6.8 mJ/cm2 for resist A versus 11.1 nm LWR and 2.7 mJ/cm2 for resist C). However even at the higher dose, the LWR target is far from Intel’s spe. At best dose and focus sidewall angles of 85° were measured, decreasing by as much as 10° - 12° as the resist moved out of focus by 400 nm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heidi B. Cao, Heidi B. Cao, Wang Yueh, Wang Yueh, Jeanette Roberts, Jeanette Roberts, Bryan Rice, Bryan Rice, Robert Bristol, Robert Bristol, Manish Chandhok, Manish Chandhok, } "EUV resist patterning performance from the Intel microexposure tool (MET)", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600214; https://doi.org/10.1117/12.600214


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