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4 May 2005 Effect of hard bake process on LER
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Line-edge roughness (LER) continues to be one of the biggest challenges as the CD size shrinks down to sub 100 nm. It is shown that resist components as well as illumination conditions play a big role. Influence of resist components in both 248 and 193nm chemically amplified resist formulations has been reported but the root cause is not fully understood and may be platform or even specific formulation dependent. This paper attempts to tackle the issue from the processing side. Effects of a simple hard bake process on the LER were studied. In the hard bake process, a given resist pattern was typically baked close to the glass-transition temperature after the development process. LER improved dramatically due to melting down of the rough surface. However, the wall angle of the edge lines also started to degrade at the optimum hard bake temperature. Studies on the effects of polymer Tg, hard bake temperature and time and the issues of the process are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Munirathna Padmanaban, David Rentkiewicz, SangHo Lee, Chisun Hong, Dongkwan Lee, Dalil Rahman, Raj Sakamuri, and Ralph R. Dammel "Effect of hard bake process on LER", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005);

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