4 May 2005 Effect of post development process for resist roughness
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Recently, gate length variation such as Line Width Roughness (LWR) is severe problem in MPU. The LWR of resist pattern is mainly due to resist material and optical contrast. However it is hard to improve these factors. Many techniques have reported to decrease LWR, but there were no reports which process was more effective for improvement on LWR. Some methods were considered to improve resist roughness. This paper discusses about LWR of ArF resist in gate layer of 65 nm node device. We tied post bake process after development to smooth resist pattern surface by its surface tension. Recess process of resist roughness by using a pattern shrink film was also investigated. LWR’s were 36% and 26% decreased by post baking process and recess process, respectively. Post bake temperature was near resist melting point. From the consideration of thermal flow process, distance of smoothing force by surface tension is considered about several hundreds nm. Pattern shrink film is using acid catalysis reaction, so its distance of smoothing by acid diffusion is considered about one hundred nm. It is considered that effect of post development process is caused by distance of smoothing force. Moreover influence of those processes for lithographic performance will be evaluated.
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Koutarou Sho, Koutarou Sho, Tsuyoshi Shibata, Tsuyoshi Shibata, Eishi Shiobara, Eishi Shiobara, Shinichi Ito, Shinichi Ito, "Effect of post development process for resist roughness", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599209; https://doi.org/10.1117/12.599209

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