4 May 2005 Effects of wet-cleans and surface treatments on the adhesion of a photoresist to HDP-oxide substrate
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Abstract
Adhesion of photoresist (PR) on substrate is one of the key issues in photolithography. Poor adhesion force between PR and substrate will cause patterns dislocated or peeled in the TMAH developing or water spin-dry process. This becomes a more serious issue in 130nm and below technology as the defects from poor PR adhesion were much more easily found by using ArF PR than by KrF or I-line ones. Besides, the defect counts of PR peeling were also found much influenced by the wet-cleans of the oxide substrate before photo process. This dependence is less observed in using KrF or I-line PRs. To understand why some wet-cleans cause serious PR lifting and what method would be effective in avoiding this issue, the interaction force between PR and oxide surface by different wet-cleans process were calculated by contact-angle measurement, and the surface state were compared by IR/AFM/XPS. The result indicates the adhesion force for ArF PR and oxide substrate is lowered by some wet-clean methods, and more dangling SiOH bonding, or more hydrophilic properties were also found through surface analysis. The contact-angle measurements may serve as a convenient index of how safety the process is free from adhesion problem. Many advices to avoid the similar event in the process development were summarized in the last.
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Shih-Chi Fu, Jieh-Jang Chen, Feng-Jia Shiu, Ching-Sen Kuo, Gwo-Yun Shiau, Chia-Shiung Tsia, Chung Wang, "Effects of wet-cleans and surface treatments on the adhesion of a photoresist to HDP-oxide substrate", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.601435; https://doi.org/10.1117/12.601435
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