Electron beam direct write process development for sub 45nm CMOS manufacturing

J. Todeschini; Laurent Pain; S. Manakli; B. Icard; V. DeJonghe; B. Minghetti; M. Jurdit; D. Henry; V. Wang

doi:10.1117/12.601616

4 May 2005 Electron beam direct write process development for sub 45nm CMOS manufacturing

J. Todeschini, Laurent Pain, S. Manakli, B. Icard, V. DeJonghe, B. Minghetti, M. Jurdit, D. Henry, V. Wang

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.601616
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Electron Beam Direct Write (EBDW) lithography represents a low cost and a rapid way to start basic studies for advance devices and process developments. Patterning for sub-45nm node technology requires the development of high performance processes. Different alternatives for the improvement of EBDW lithography are investigated in this paper for the ASIC manufacturing on 300mm wafer size. Among them, process development has been tuned for clear field equivalent level to improve both line width roughness by monitoring post applied bake conditions, and both process window by specific design correction. Concerning dark field level, process resolution has been improved by a shrinkage technique.

Citation Download Citation

J. Todeschini, Laurent Pain, S. Manakli, B. Icard, V. DeJonghe, B. Minghetti, M. Jurdit, D. Henry, and V. Wang "Electron beam direct write process development for sub 45nm CMOS manufacturing", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.601616

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