Translator Disclaimer
Paper
4 May 2005 Global planarization of gap-filling process for low-k dual damascene applications
Author Affiliations +
Abstract
Planarization of gap-filling materials for low-k dual damascene processes is getting more and more important due to the photoresist process window shrinking as the pitch and critical dimensions shrink. Defects, especially pattern collapses, will become a serious problem if there is no global planarization for low-k dual damascene processes. IC manufacturers and materials vendors have proposed several ways to improve the global planarization of gap filling, such as using materials with different viscosities, fine tuning gap-filling material coating recipes, and even using optical or chemical treatments to obtain global planarization. The effect of the different conformalities of the first and second coating materials on coating performance will be discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ruei Hung Hsu, I. H. Huang, Ling Chieh Lin, and Benjamin Szu-Min Lin "Global planarization of gap-filling process for low-k dual damascene applications", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600408
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top