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4 May 2005 Material design and evaluation of nanocomposite resist for next generation lithography
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A chemically amplified resist, Poly(4-hydroxystyrene-co-tertiarybutylmethacrylate-co-MethacrylphenylPOSS) with different Polyhedral oligosilsesquioxane (POSS) loading has been synthesized by free radical polymerization. The incorporation of POSS units into the resist matrix has been found to affect their RIE resistance in O2 plasma. The thickness of the films were monitored using ellipsometry at various etch intervals to determine the etch rate and selectivity. It was observed that etch rate of these nanocomposite resists were comparable to the standard PHOST and Novolac based resists. HRTEM and HAADF studies showed that the POSS units exhibit a morphology of rectangular crystallites that are responsible for the plasma etch behavior. We have obtained 120 nm (1:1) (Line/Space) feature using 248 nm lithography. The protecting group, tertiary butyl protecting group exhibits acceptable outgassing. Using e-beam lithography, 70nm pattern feature was obtained.
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Kenneth E. Gonsalves, Muthiah Thiyagarajan, Kim Dean, Patricia Santiago, L. Rendon, Augustin Jeyakumar, and Clifford L. Henderson "Material design and evaluation of nanocomposite resist for next generation lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005);

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