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4 May 2005 Mechanism study of defect improvement by short develop time process
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Abstract
Recently, importance of reducing the post development defects is being emphasized. There are a lot of countermeasures to reduce the defects. However, most of them are quite costly or require complicated process systems. In our previous report, it was found that short develop time process is effective to reduce micro bridge defects for a 193 nm resist, although the mechanism of this phenomenon was unclear. In this study, we focused on the properties of a 193 nm resist during the development process for the purpose of finding the mechanism of defect reduction by short develop time process. We first evaluated the effect of “exposure dose” and “developing time”; two parameters which were inevitably changed in short develop time process. Our original defect evaluation method was employed for this purpose. Evaluation results indicated that increased exposure dose to optimize critical dimension (CD) in short develop time process has a larger impact on defectivity than shortening developing time itself. Infrared (IR) spectroscopy study of the resist film revealed that there was a good correlation between defectivity and deprotection ratio of the resist polymer, which suggested that polarity of the resist was a key to control defectivity. Finally, impact of resist polarity on defectivity was confirmed by changing the polarity of the rinse solution. Based on these experimental results, we proposed the mechanism of development defect improvement by short develop time process.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Tamada and Masakazu Sanada "Mechanism study of defect improvement by short develop time process", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599171
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