4 May 2005 New polymer platform of BARC for ArF lithography
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We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, method of polymerization (molecular weight control), and additives. Moreover, these materials have the unique characteristic that the resist profiles change little even if the type of resist changes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiomi Hiroi, Takahiro Kishioka, Rikimaru Sakamoto, Daisuke Maruyama, Yasushi Sakaida, Takashi Matsumoto, Yasuyuki Nakajima, SangMun Chon, YoungHo Kim, Sangwoong Yoon, Seok Han, YoungHoon Kim, EunYoung Yoon, "New polymer platform of BARC for ArF lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599421; https://doi.org/10.1117/12.599421

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