4 May 2005 New polymer platform of BARC for ArF lithography
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We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, method of polymerization (molecular weight control), and additives. Moreover, these materials have the unique characteristic that the resist profiles change little even if the type of resist changes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiomi Hiroi, Yoshiomi Hiroi, Takahiro Kishioka, Takahiro Kishioka, Rikimaru Sakamoto, Rikimaru Sakamoto, Daisuke Maruyama, Daisuke Maruyama, Yasushi Sakaida, Yasushi Sakaida, Takashi Matsumoto, Takashi Matsumoto, Yasuyuki Nakajima, Yasuyuki Nakajima, SangMun Chon, SangMun Chon, YoungHo Kim, YoungHo Kim, Sangwoong Yoon, Sangwoong Yoon, Seok Han, Seok Han, YoungHoon Kim, YoungHoon Kim, EunYoung Yoon, EunYoung Yoon, } "New polymer platform of BARC for ArF lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599421; https://doi.org/10.1117/12.599421

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