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4 May 2005 New shrinkage technology for nano-contact hole formation
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Abstract
More simple and cost-effective shrinkage techniques for contact hole (C/H) are required instead of conventional technologies such as thermal flow, RELACS, SAFIER and CONPEAT with the aggressive reduction in size of devices. We have developed a new method, Coating Assisted Shrinkage of Space (CASS) process. This process simply coats polymer over the patterned wafer. It doesn't need a bake and rinse step for shrinkage. Sub-100 nm C/H patterns were successfully defined after coating CASS material with good profile.
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Geunsu Lee, Jungwoo Park, Wonwook Lee, Cheolkyu Bok, Changmoon Lim, and Sungchan Moon "New shrinkage technology for nano-contact hole formation", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598592
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