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4 May 2005 Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography
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Abstract
Extreme UV lithography (EUVL) is one of the most promising NGL technologies for sub-100nm resolution. We are developing polymer bound PAG resists for patterning down to the 32 nm node by EUVL. It has been reported that photoacid generators have limited compatibility with the chemically amplified polymer resist matrix that leads to phase separation, non-uniform acid distribution and migration during the baking process. To alleviate these problems, it is proposed that PAG units be incorporated in the resist chains, rather than adding monomeric PAG in to the resist polymer. The polymer bound PAG resists, poly (4-hydroxystyrene-co-2-ethyl-2-adamantyl methacrylate-co-PAG) were synthesized with different PAG loading (2% to 10.5%) using free radical polymerization. These resists contain the bulky adamantly protecting group to improve lithographic performance. The incorporation of photoacid generators (ionic and covalent) in the main chain of the polymer enhanced sensitivity and contrast compared to conventional PMMA resist and polymer with blend PAG. It was found that the sample with 5% PAG loading in the main chain gave sub 50 nm features using EUV exposure.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth E. Gonsalves, Muthiah Thiyagarajan, and Kim Dean "Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.602087
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