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4 May 2005 Novel chemical shrinkage material for small contact hole and small space patterning
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Abstract
It is becoming difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory devices. In order to retain the acceleration, low k1 processes beyond the limitation of wavelength are required. Various resolution enhancement techniques have been suggested for this purpose. Especially, chemical shrinkage process utilizing an additional chemical treatment upon patterned photoresist to make patterns finer has been turned out to be effective. The current chemical shrinkage materials are, however, suffering from small attachment amounts or pattern deformation. In this paper, a novel chemical shrinkage material causing large attachments without pattern deformation is suggested. The material is an aqueous solution of two kinds of polymers and its shrinkage mechanism is based on inter-polymer complex formation and gelation principle. Compositions, shrinkage properties, and application studies to contact hole patterns are presented.
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Mitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Man-Hyoung Ryoo, Sang-Gyun Woo, and Han-Ku Cho "Novel chemical shrinkage material for small contact hole and small space patterning", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599468
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