Novel single-layer i-line positive resist lift-off process with oxidation step in develop

Jianxin Zhu; David N. Tomes Sr.; Frank Yaghmaie; Rosemary Bell

doi:10.1117/12.599176

4 May 2005 Novel single-layer i-line positive resist lift-off process with oxidation step in develop

Jianxin Zhu, David N. Tomes Sr., Frank Yaghmaie, Rosemary Bell

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.599176
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

A novel single-layer Rohm and Hass SPR220 lift-off processes with oxidation step in a double-cycle develop is introduced to offer promising lift-off profiles. First, the coated wafer uses a typical Pre-soak process before exposure to introduce an inhibition layer in the film. After exposure and PEB, a three-step (develop-oxidation-develop) develop process is used. Oxidation step is done by rinsing in DI water and drying the film after the first develop step prior to the second develop step. SEM cross-section inspection shows the wafers have gone through the oxidation step between the two develop cycles and present an ideal lift-off profile. This work has shown these profiles are not attainable without the oxidation step. The lift-off profile is repeatable as resist thickness changes between 2 - 6μm. The process also shows excellent process window capability and stability. It can be ideally used for thin-film deposition or a self-aligned one-mask etch/deposition application. We will also discuss and show process development for films at thickness’ of 1μm or less for smaller CD applications.

Citation Download Citation

Jianxin Zhu, David N. Tomes Sr., Frank Yaghmaie, and Rosemary Bell "Novel single-layer i-line positive resist lift-off process with oxidation step in develop", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599176

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