Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device

MyoungSoo Kim; HakJoon Kim; KewChan Shim; JeHa Jeon; MyungGoon Gil; YongWook Song; Tomoyuki Enomoto; Takahiro Sakaguchi; Yasuyuki Nakajima

doi:10.1117/12.599434

4 May 2005 Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device

MyoungSoo Kim, HakJoon Kim, KewChan Shim, JeHa Jeon, MyungGoon Gil, YongWook Song, Tomoyuki Enomoto, Takahiro Sakaguchi, Yasuyuki Nakajima

Author Affiliations +

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.599434
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. As the chip size is reduced to sub 100nm, the photoresist thickness has to decrease with the aspect ratio being less than 3.0. Therefore, new Organic BARC is strongly required which has the minimum reflectivity with thinner BARC thickness and higher etch selectivity toward resists. Hynix Semiconductor Inc., Nissan Chemical Industries, Ltd., and Brewer Science, Inc. have developed the advanced Organic BARC for achieving the above purpose. As a result, the suitable high performance 248nm Organic BARCs, NCA series, were achieved. Using CF4 gas as etchant, the plasma etch rate of NCA series is about 1.4 times higher than that of conventional 248nm resists. NCA series can be minimizing the substrate reflectivity at below 45nm BARC thickness. NCA series show the excellent litho performance and coating property on real device.

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MyoungSoo Kim, HakJoon Kim, KewChan Shim, JeHa Jeon, MyungGoon Gil, YongWook Song, Tomoyuki Enomoto, Takahiro Sakaguchi, and Yasuyuki Nakajima "Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599434

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KEYWORDS

Reflectivity

Photoresist materials

Silicon

Etching

Semiconducting wafers

Coating

Oxides

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