4 May 2005 Performance of EUV photoresists on the ALS micro exposure tool
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The new high NA (0.3) Micro Exposure Tool at the Advanced Light Source (MET@ALS) at Lawrence Berkeley National Laboratories provides the first opportunity to evaluate the ultimate resolution capabilities of chemically amplified resists using EUV lithography. We characterized the imaging capabilities of a well-known tool-test resist (EUV-2D, XP98248B) and a new high resolution resist (MET-1K, XP3454C). Emphasis was placed on evaluating resists for focus and exposure latitude at 50 nm dense and isolated lines. MET-1K is capable of resolving 30 nm lines and shows modulation in 25 nm dense lines. We describe some early process optimization experiments using MET-1K that show further advances in lithographic capability. Another new series of resists (MET-2A, 2B, 2C, 2D) also show great promise for good resolution, LER and sensitivity.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Koehler, Thomas Koehler, Robert L. Brainard, Robert L. Brainard, Patrick P. Naulleau, Patrick P. Naulleau, David Van Steenwinckel, David Van Steenwinckel, Jeroen H. Lammers, Jeroen H. Lammers, Kenneth A. Goldberg, Kenneth A. Goldberg, Joseph F. Mackevich, Joseph F. Mackevich, Peter Trefonas, Peter Trefonas, } "Performance of EUV photoresists on the ALS micro exposure tool", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600511; https://doi.org/10.1117/12.600511

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