4 May 2005 Studies on leaching of photoresist components by water
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Abstract
Immersion lithography has drawn tons of interests as a potential solution for sub-65nm patterning. High refractive index liquid, which is filled in the gap between exposure lens and a photoresist, can improve a resolution through increased effective numerical aperture (NA) of the exposure system. Most attractive liquid for this purpose is water. Our works were conducted as a part of the basic study for immersion lithography and aimed for the verification of leached resist components by water. It was observed that leaching relies largely on the free volume of a polymer and anion size of photoacid generator (PAG). The larger free volume and the smaller anion, the larger T-top resist profile was generated. Additionally, effects of solvents, quenchers and polarity of the polymer were investigated. Detailed results will be reported in this paper.
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Seung Keun Oh, Seung Keun Oh, Jong Yong Kim, Jong Yong Kim, Young Ho Jung, Young Ho Jung, Jae Woo Lee, Jae Woo Lee, Deog Bae Kim, Deog Bae Kim, Jaehyun Kim, Jaehyun Kim, Geun Su Lee, Geun Su Lee, Sung Koo Lee, Sung Koo Lee, Keun Do Ban, Keun Do Ban, Jae Chang Jung, Jae Chang Jung, Cheol Kyu Bok, Cheol Kyu Bok, Seung Chan Moon, Seung Chan Moon, } "Studies on leaching of photoresist components by water", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.598618; https://doi.org/10.1117/12.598618
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