Paper
4 May 2005 Study of 157 nm resists with full field exposure tools
Author Affiliations +
Abstract
A detailed account will be given of work done on the Micrascan VII (NA 0.75) at INVENT in Albany with AZ EXP X20 and AZ EXP X25 resist systems based upon BOCME protected fluoroalcohol resins. These resins were examined either with a high or low level of formulated photoacid generator (PAG). Our evaluations done both with binary and alternating phase shift mask exposures. It was found in our initial studies done at relatively high amine levels (1-2 ppb) that AZ EXP X25 X with low PAG gave the best performance.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Francis M. Houlihan, Raj Sakamuri, Alla Dimerli, Andrew Romano, and Ralph R. Dammel "Study of 157 nm resists with full field exposure tools", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.601811
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KEYWORDS
Thin film coatings

Coating

Binary data

Photomasks

Lithography

Phase shifts

Semiconducting wafers

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