12 May 2004 Complementary dipole exposure solutions at 0.29 k1
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Abstract
We have processed a 22 mm x 4.5 mm design for Complementary Dipole Exposure (CDE), with pitches down to 150 nm. The design included SRAM active, poly, and random logic poly structures. A model-assisted decomposition technique was used to determine which feature element should be incorporated into which mask layer to provide optimal printability. The entire design was treated using a single script. The resulting mask layers were corrected for proximity effects, and placed on a binary mask. Mask CD-SEM measurements showed that both narrow lines and small gaps were generated with excellent accuracy. Double exposures were done on an ASML PAS 5500/1100 0.75 NA ArF scanner. The densest pitch present on the design was 150 nm, corresponding to a k1 of 0.29 for a 0.75 NA ArF scanner. Apart from dense pitches, the design also had challenging structures with target CD’s down to 70 nm and gaps as small as 80 nm. SEM measurements of the exposed wafer were used to verify the patterning fidelity of typical active and poly SRAM geometries, and random logic poly structures. We conclude by showing the first imaging data obtained with CDE, using polarized light on a 0.93 NA ASML TWINSCAN XT:1400 step & scan system.
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Eric Hendrickx, Andres Torres, Neal Lafferty, Laurent Le Cam, Stephen Johnson, Carlo Reita, Geert Vandenberghe, Wilhelm Maurer, "Complementary dipole exposure solutions at 0.29 k1", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600843; https://doi.org/10.1117/12.600843
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