12 May 2004 Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node
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Abstract
A chrome-less phase-shift mask for the 70nm technology was designed and manufactured. The mask contains “lines and spaces” including programmed defects. Each defect was characterized with respect to the critical dimension (CD) variation on wafer, defect size, aerial image deviation, as well as inspection capture rate. It was found that defects with an AIMS intensity deviation of above 9 % are to be considered critical. The corresponding critical defect size is dependent on the defect type. All lithographically significant mask defects were found reliably using a KLA 576 inspection tool.
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J. Heumann, J. Heumann, J. Schramm, J. Schramm, A. Birnstein, A. Birnstein, K. T. Park, K. T. Park, T. Witte, T. Witte, N. Morgana, N. Morgana, M. Hennig, M. Hennig, R. Pforr, R. Pforr, J. Thiele, J. Thiele, N. Schmidt, N. Schmidt, C. Aquino, C. Aquino, } "Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.601568; https://doi.org/10.1117/12.601568
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