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12 May 2005 Full chip model based correction of flare-induced linewidth variation
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Scattered light in optical lithography, also known as flare, has been shown to cause potentially significant linewidth variation at low-k1 values. The interaction radius of this effect can extend essentially from zero to the full range of a product die and beyond. Because of this large interaction radius the correction of the effect can be very computation-intensive. In this paper, we will present the results of our work to characterize the flare effect for 65nm and 90nm poly processes, model that flare effect as a summation of gaussian convolution kernels, and correct it within a hierarchical model based OPC engine. Novel methods for model based correction of the flare effect, which preserve much of the design hierarchy, is discussed. The same technique has demonstrated the ability to correct for long-range loading effects encountered during the manufacture of reticles.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Word, Jerome Belledent, Yorick Trouiller, Yuri Granik, Olivier Toublan, and Wilhelm Maurer "Full chip model based correction of flare-induced linewidth variation", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005);


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