12 May 2004 High-power injection lock laser platform for ArF dry/wet lithography
Author Affiliations +
193-nm lithography is moving from the pre-production to the mass production phase and its target node is shifting from 90 nm to 65 nm. And now the ArF-immersion technology is spotlighted as the enabling technology for below 45nm node1). 157nm lithography is still important for next generation node below 45 nm as backup technology2). Gigaphoton has already released G40A (20W, 0.35pm) in 2001, G41A (20W, 0.30pm)3) in 2002, G42A (20W, 0.25pm)4) in 2003 to the advanced lithography market. On the other hand, since 1998 we have been developing high power 157nm light source for micro lithography with injection lock technology in research phase5)6). We have demonstrated a 30W, 0.12pm, @157nm line narrowed light source for microlithography with "Injection lock technology"1)2). Based on this injection lock technology, we have successfully developed "GigaTwin", a high power injection lock laser platform for 193nm lithography system. We have already released a high power ultra narrowed ArF laser "GT40A" (45W, 4000Hz, 11.25mJ, 0.18pm), with the GigaTwin platform.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Mizoguchi, T. Inoue, J. Fujimoto, T. Yamazaki, T. Suzuki, T. Matsunaga, S. Sakanishi, M. Kaminishi, Y. Watanabe, T. Ohta, M. Nakane, M. Moriya, T. Nakaike, M. Shinbori, M. Yoshino, T. Kawasuji, H. Nogawa, T. Ito, H. Umeda, S. Tanaka, H. Taniguchi, Y. Sasaki, J. Kinoshita, T. Abe, H. Tanaka, H. Hayashi, K. Miyao, M. Niwano, A. Kurosu, M. Yashiro, H. Nagano, N. Matsui, T. Mimura, K. Kakizaki, M. Goto, "High-power injection lock laser platform for ArF dry/wet lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600796; https://doi.org/10.1117/12.600796

Back to Top