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12 May 2005 High transmission mask technology for 45nm node imaging
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Abstract
The lithography prognosticator of the early 1980’s declared the end of optics for sub-0.5μm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into laser bands of 248nm and to 193nm. As each wavelength matured, innovative optical solutions and further improvements in photoresist technology have demonstrated that extending imaging resolution is possible thus further reducing k1. Several authors have recently discussed manufacturing imaging solutions for sub-0.3k1 and the integration challenges. The requirements stated in the ITRS roadmap for current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will continue further for aggressive imaging solutions. Lithography and more importantly “imaging solutions” are driven by economics. The technology might be extremely innovative and “fun”, however, if it's too expensive it may never see the light of scanner. The authors have investigated and compared the capability of high transmission mask technology and image process integration for the 45nm node. However, the results will be graded in terms of design, mask manufacturability, imaging performance and overall integration within a given process flow.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Mike Cangemi, Bryan S. Kasprowicz, Matt Lassiter, Lloyd C. Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, and Chris Progler "High transmission mask technology for 45nm node imaging", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.601584
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