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12 May 2005 Hopkins equation in Hilbert space and its application in polarized illumination modeling
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Abstract
The ever-increasing demand for shrinkage of IC device dimensions has been pushing the development of new technologies in micro lithography. Polarized illumination source is one of the emerging techniques in lithography to increase wafer printability, especially for 65 nm features and below. In the mean time, most RET techniques, which are showing more and more importance in lithography, are based on a highly accurate optical lithography model and simulator. Consequently, simulation and modeling tools for optical lithography may have to include the effects of source polarization in thin film stacks. In this paper we discuss some theoretical aspects of vector modeling methods that are utilized for polarization modeling and show results from Synopsys’ simulation tool Progen.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junjiang Lei, Min Bai, Jim Shiely, and Lin Zhang "Hopkins equation in Hilbert space and its application in polarized illumination modeling", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.601196
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