12 May 2004 Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer
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Abstract
In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.
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Eui-Sang Park, Eui-Sang Park, Hyun-Joon Cho, Hyun-Joon Cho, Jin-Min Kim, Jin-Min Kim, Sang-Soo Choi, Sang-Soo Choi, } "Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.599855; https://doi.org/10.1117/12.599855
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