12 May 2004 Mask enhancer technology for 45-nm node contact hole fabrication
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Abstract
We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply a new mask blank on Mask Enhancer in order to prevent the light intensity loss caused by the mask topography effect. We also perform to expose the new Mask Enhancer on the first ArF immersion scanner, ASML AT1150i. We demonstrate that the new Mask Enhancer can achieve 45nm-node contact hole printing with sufficient lithographic performance with combination of immersion lithography.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Yuito, Takashi Yuito, Vincent Wiaux, Vincent Wiaux, Lieve Van Look, Lieve Van Look, Geert Vandenberghe, Geert Vandenberghe, Shigeo Irie, Shigeo Irie, Takahiro Matsuo, Takahiro Matsuo, Akio Misaka, Akio Misaka, Hisashi Watanabe, Hisashi Watanabe, Masaru Sasago, Masaru Sasago, } "Mask enhancer technology for 45-nm node contact hole fabrication", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.598977; https://doi.org/10.1117/12.598977
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