12 May 2004 Novel illumination apertures for resolution-enhanced technology and through-pitch critical dimension control
Author Affiliations +
As line width shrunk down to 90nm and below, resolution-enhanced technology in combination with thinner resists, higher NA (numerical aperture), OPC (optical proximity correction), and special mask types becomes essential for standard lower k1 lithography. Although DDL (double dipole) is popular for low k1 technology, separated x- and y-direction mask exposures will complex the process and reduce throughput. Quadrupole (Nikon) and QUASARTM (ASML) are well-known technologies for smaller pitch approaches with 45o circuit design ruled out constraints. In this paper, we report novel customized-illumination apertures for resolution-enhanced patterns and through-pitch critical dimensions control using a single exposure without design constraint and alignment problems. Both simulation and real exposure results are compared and the difference between aerial images and real resist profiles are also presented. Through-pitch CD uniformity, MEEF, line-end shortening, linearity, and DOF is improved for different illumination apertures with reduced OPC loading and cost effectively.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Hsiung Huang, I. Hsiung Huang, Ling Chieh Lin, Ling Chieh Lin, Chin L. Lin, Chin L. Lin, "Novel illumination apertures for resolution-enhanced technology and through-pitch critical dimension control", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.599559; https://doi.org/10.1117/12.599559


Annotated layout optimization
Proceedings of SPIE (March 12 2006)
The rising cost and complexity of RETs
Proceedings of SPIE (May 02 2004)
MEEF-based mask inspection
Proceedings of SPIE (December 05 2004)

Back to Top