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12 May 2005 OPC modeling by genetic algorithm
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Abstract
Optical proximity correction (OPC) is usually used to pre-distort mask layouts to make the printed patterns as close to the desired shapes as possible. For model-based OPC, a lithographic model to predict critical dimensions after lithographic processing is needed. The model is usually obtained via a regression of parameters based on experimental data containing optical proximity effects. When the parameters involve a mix of the continuous (optical and resist models) and the discrete (kernel numbers) sets, the traditional numerical optimization method may have difficulty handling model fitting. In this study, an artificial-intelligent optimization method was used to regress the parameters of the lithographic models for OPC. The implemented phenomenological models were constant-threshold models that combine diffused aerial image models with loading effects. Optical kernels decomposed from Hopkin’s equation were used to calculate aerial images on the wafer. Similarly, the numbers of optical kernels were treated as regression parameters. This way, good regression results were obtained with different sets of optical proximity effect data.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. C. Huang, C. M. Lai, B. Luo, C. K. Tsai, C. S. Tsay, C. W. Lai, C. C. Kuo, R. G. Liu, H. T. Lin, and B. J. Lin "OPC modeling by genetic algorithm", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.602096
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