12 May 2004 Status of 157 nm lithography and prospects for immersion
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The FPA-5800FS1 157-nm scanner installed at Selete has demonstrated a minimum resolution of 55 nm for line-and-space (L/S) patterns with a numerical aperture (NA) of 0.8. The scanner has been used for 65-nm-node device fabrication and will be used for 45-nm-node device development. The approximately 20% shorter wavelength in 157-nm lithography has several advantages compared to 193-nm immersion lithography. For example, assuming the same k1 value, 157-nm lithography, which has a 20% smaller NA, has a 25% larger depth of focus and better resolution in two-dimensional patterns, for which polarized illumination is not effective. This 157- nm immersion lithography has the potential to be used for 32-nm-node device fabrication with a k1 of 0.3 in combination with a high-refractive-index immersion fluid. To demonstrate the process feasibility of 157-nm immersion lithography, we developed a two-beam interferometric stepper with a high-quality F2 laser and used it and a commercial perfluoroether as an immersion fluid to print 60-nm L/S patterns with a steep cross-sectional profile. Development of an immersion fluid with a high refractive index and low optical absorption is critical issue for making 157-nm immersion lithography practical. We have identified several fluorinated polymers with high diffractive indices and will continue searching for suitable 157-nm immersion fluids.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Fujii, Kiyoshi Fujii, Takuya Hagiwara, Takuya Hagiwara, Seiji Matsuura, Seiji Matsuura, Toshiyuki Ishimaru, Toshiyuki Ishimaru, Yoshihisa Matsubara, Yoshihisa Matsubara, Wataru Wakamiya, Wataru Wakamiya, } "Status of 157 nm lithography and prospects for immersion", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.599455; https://doi.org/10.1117/12.599455


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