The challenge of high-volume 193-nm semiconductor manufacturing

U. P. Schroder; S. Poelders; T. Fischer; K. Schumacher; A. Kiss; A. Frangen; D. Nees; M. Kubis; G. Erley; B. Janke

doi:10.1117/12.594628

12 May 2005 The challenge of high-volume 193-nm semiconductor manufacturing

U. P. Schroder, S. Poelders, T. Fischer, K. Schumacher, A. Kiss, A. Frangen, D. Nees, M. Kubis, G. Erley, B. Janke

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.594628
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

This paper discusses a variety of issues encountered in 193nm lithography high volume production. In order to debug the new 193nm technology, a layer from an older qualified technology was qualified on the new tools. Tool statistics were benchmarked against the installed 248nm tool base. Several issues not known from 248nm lithography or from low volume R&D type pilot runs on 193nm were uncovered. Specifically, issues related to aging of optical parts, defects from various sources, track processing, and masks are discussed.

Citation Download Citation

U. P. Schroder, S. Poelders, T. Fischer, K. Schumacher, A. Kiss, A. Frangen, D. Nees, M. Kubis, G. Erley, and B. Janke "The challenge of high-volume 193-nm semiconductor manufacturing", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.594628

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