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12 May 2005 The challenge of high-volume 193-nm semiconductor manufacturing
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Abstract
This paper discusses a variety of issues encountered in 193nm lithography high volume production. In order to debug the new 193nm technology, a layer from an older qualified technology was qualified on the new tools. Tool statistics were benchmarked against the installed 248nm tool base. Several issues not known from 248nm lithography or from low volume R&D type pilot runs on 193nm were uncovered. Specifically, issues related to aging of optical parts, defects from various sources, track processing, and masks are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. P. Schroder, S. Poelders, T. Fischer, K. Schumacher, A. Kiss, A. Frangen, D. Nees, M. Kubis, G. Erley, and B. Janke "The challenge of high-volume 193-nm semiconductor manufacturing", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.594628
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